RF Magnetron Sputtering Ti-Al-In-O Films for Gate Dielectrics of MOS Devices

RF Magnetron Sputtering Ti-Al-In-O Films for Gate Dielectrics of MOS Devices

碩士 === 國立臺灣科技大學 === 高分子系 === 97 === Three kinds of titanium-aluminum-indium oxide (TAIO) thin film were deposited on p-type silicon by R.F sputtering with three different targets (target A, target B, and target C) made of titanium (Ti), aluminum (Al) and indium oxide (In2O3), followed by rapid therm...

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Bibliographic Details
Main Authors:	Tzu-chao Lin, 林子超
Other Authors:	Kuo, Dong-Hau
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/14105837069329513966

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