RF Magnetron Sputtering Ti-Al-In-O Films for Gate Dielectrics of MOS Devices
碩士 === 國立臺灣科技大學 === 高分子系 === 97 === Three kinds of titanium-aluminum-indium oxide (TAIO) thin film were deposited on p-type silicon by R.F sputtering with three different targets (target A, target B, and target C) made of titanium (Ti), aluminum (Al) and indium oxide (In2O3), followed by rapid therm...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14105837069329513966 |