| Summary: | 碩士 === 國立臺灣科技大學 === 高分子系 === 97 === The patterned poly(styrene) (PS) polymer brushes were grafted on the silicon surface by using atom transfer radical polymerization (ATRP). The silicon wafer surface with photoresist patterns from electron beam lithography was treated by oxygen plasma to increase the hydroxyl groups. The hydroxyl group on the surface reacted with 3-aminopropyltriethoxy silane (APTES), then α-Bromoisobutyl bromide was used to react with APTES to immobilize the initiator of grafting polymerization on the surface. The PS brushes on the silicon wafer surface were grafted by using CuBr、1,1,4,7,7-Pentamethyldie-
thylenetriamine(PMDETA)、Ethyl2-bromoisobutyrate (E2-BiB) and styrene as the catalytic, ligand, free polymer and monomer for ATRP, respectively. The Electron Spectroscopy for Chemical Analysis (ESCA) was utilized to analyze the surface element of SAMs of initiator and PS polymer brushes. The morphology of patterned SAMs and PMMA brushes were investigated by atomic force microscopy (AFM) and Scanning Electron Microscopy
(SEM).The relationship of polymerization time and coefficient of friction is positive correlation (0.132、0.202、0.296、0.328、0.428). The molecular weight and polydispersity index of “free” PS after 26hrs are about 18372 g/mol and 1.13, respectively, obtained from gel Permeation chromatography (GPC). The surface free energy is 32.93mJ/m2, which was calculated through contact angles after n-hexane immersion. The fabricated process of patterned PS brushes on the silicon surface was established in this work.
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