| Summary: | 碩士 === 國立臺灣科技大學 === 材料科技研究所 === 97 === This study is divided into three parts. In the first step we used SLS (Solid-Liquid-Solid) mechanism to grow silicon nanowires directly on Si substrate with gold particles as catalyst. Nanowires could be fabricated while passing mixed argon and hydrogen gases through a quratz tube been heated upon 850 ℃. We produced the nanowires with different lengths by changing the process temperatures and times. The nanowires which we grew up were composed of silica, and the length could be controlled under 100 nm.
In the second part PCS solution was applied to the silica nanowires substrate prepared from step one, and then heated in the quartz tube. It was noticed that many factors, like PCS concentration or heat treatment parameter, would affect the product’s conformation and character. Using pure argon or hydrogen mixed gas as heating atmosphere would make the SiC nanowires different much more with morphologies.
At last we proceeded measurements of nanowires’ optical and field emission properties. It showed that the lowest turn-on field of 4.7 V/μm was observed from SiC thin film coated silica nanowires. This specimen emitted green light at 520 nm by PL, in addition.
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