The growth of silicon nanowire by Electroless Deposition and SLS mechanism
碩士 === 國立臺灣科技大學 === 材料科技研究所 === 97 === Abstract In this thesis, the study is divided into four parts. The first part of study is on electroless deposition (ELD) of nickel film on silicon substrate. and then used SLS mechanism to grow SiNWS. The second part of study focuses on anneal of nickel-co...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03072786021273704593 |
| Summary: | 碩士 === 國立臺灣科技大學 === 材料科技研究所 === 97 === Abstract
In this thesis, the study is divided into four parts. The first part of study is on electroless deposition (ELD) of nickel film on silicon substrate. and then used SLS mechanism to grow SiNWS.
The second part of study focuses on anneal of nickel-coated silicon substrate in a furnace. The growth of silicon nanowires were conducted at various temperatures. As a result ,SiNW uniform diameter and high density were generated at 1100℃ .
The third part of study used mils oxidation of SiNWS to promote quantum confinement effect. SiNW oxidized at 650℃ for 10 minutes enhanced photoluminesce ( PL ) intensity about 4 times compared to the as grow counterpart.
The final part of study focuses on electroluminescene ( EL ) of SiNW . Then was grow at 1100℃ for 60 minutes followed by oxidation at 650℃ for 10 minutes.
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