Investigation of ITO Layers for Applications in a-Si/c-Si Heterojunction Solar Cells

• Main Authors: Jun-chieh Wu, 吳潤節
• Other Authors: Lu-Sheng Hong
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/03396366587993201092

碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === Indium tin oxide (ITO) layers are usually used for a-Si/c-Si heterojunction solar cells, because of their high conductivity and high transparency in the visible region of the spectrum. ITO layers also can be used for antireflecting to reduce the reflectance losses. ITO films were deposited by RF-sputtering in this thesis. In our experiment, the lowest resitivity of ITO layer was 3.34 × 10-4 Ωcm at the thickness of 110 nm. The average transmittance in the visible region can higher than 92% and the figure of merit value was 1.53 × 10-2 Ω-1. We can reduce cost by producing thin silicon wafer, but the thin silicon wafer can not treat by traditional high temperature diffusion process. So we deposit a-Si by PECVD to reduce the temperature of process. For the Si-heterojunction solar cells, We measured the carrier lifetime and implied Voc by mic-PCD (Sinton, WCT-120). The highest implied Voc was 620 mV. In I-V measurement, Voc was reduced to 0.44 V, Jsc was 25 mA/cm2. The efficiency of solar cell was 3.27 %, We can attribute to higher series resistance and lower shunt resistance.