Optoelectronic Properties of P-type Silicon Films Prepared by RF-PECVD

Optoelectronic Properties of P-type Silicon Films Prepared by RF-PECVD

碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === In this thesis, the p-type amorphous silicon carbide (a-SiC) and p-type hydrogenated microcrystalline silicon (μc-Si:H) films were deposited on glass by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) using trimethylboron (TMB) as the doping...

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Bibliographic Details
Main Authors:	Ping-Hsun Chu, 朱炳勳
Other Authors:	Lu-sheng Hong
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/69577553690912982121

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