Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate

碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === Pt-Ru alloy can be produced with some methods. One of these methods is applying thin film technology. The aim of this research is to find the reaction zone of depositing Pt-Ru alloy catalyst by atomic layer deposition (ALD) method. Before using ALD method, the re...

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Main Authors: Sriana Tun, 史安菟
Other Authors: Lu-Sheng Hong
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/03557303134725953357
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spelling ndltd-TW-097NTUS50630552016-05-02T04:11:47Z http://ndltd.ncl.edu.tw/handle/03557303134725953357 Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate 結合化學氣相沉積與原子層沉積法於矽晶基材上的鉑-釕觸媒沉積之研究 Sriana Tun 史安菟 碩士 國立臺灣科技大學 化學工程系 97 Pt-Ru alloy can be produced with some methods. One of these methods is applying thin film technology. The aim of this research is to find the reaction zone of depositing Pt-Ru alloy catalyst by atomic layer deposition (ALD) method. Before using ALD method, the reactions of Ru precursor on various substrates were studied by chemical vapor deposition (CVD) method to understand the baseline of Ru-CVD. Then, we applied the baseline condition of CVD method to investigate the ALD growth regime. On the other hand, we investigated the Pt deposition by ALD method using hydrogen as the reactive gas. Finally, we tried to combine CVD and ALD method for the deposition of Pt-Ru binary catalysts on Si(111) substrate. Ru catalyst deposition by CVD method, the different regimes of reactions kinetics were taken place on different substrate, which resulted in different morphology of Ru catalyst by using bis(ethylcyclopentadienyl) ruthenium as precursor. Since Ru depositions were controlled by adsorption of precursor, Ru catalysts were more difficult applied by ALD method than by CVD method. The hydrogen was used as the reactive gas to react with trimethylcyclopentadienyl platinum for Pt ALD. Close to 1 ML deposition of Pt can be achieved at substrate temperatures of 300 and 350oC. 2s exposure time of purge obtained good result for 4s exposure time of precursor but not enough when exposure time of precursor was increased to 6s. Increasing exposure time of hydrogen as the reactive gas resulted in a quite low growth rate because the hydrogen would remove the precursor, though they might not react to each other. Combination of Ru CVD and Pt ALD methods applied in DMFCs using oxygen as reactive gas gave the better performance compared with using hydrogen gas. Moreover, the CO poison of Pt catalysts can be eliminated by the combination of Ru CVD and Pt ALD methods. Lu-Sheng Hong 洪儒生 2009 學位論文 ; thesis 111 en_US
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language en_US
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sources NDLTD
description 碩士 === 國立臺灣科技大學 === 化學工程系 === 97 === Pt-Ru alloy can be produced with some methods. One of these methods is applying thin film technology. The aim of this research is to find the reaction zone of depositing Pt-Ru alloy catalyst by atomic layer deposition (ALD) method. Before using ALD method, the reactions of Ru precursor on various substrates were studied by chemical vapor deposition (CVD) method to understand the baseline of Ru-CVD. Then, we applied the baseline condition of CVD method to investigate the ALD growth regime. On the other hand, we investigated the Pt deposition by ALD method using hydrogen as the reactive gas. Finally, we tried to combine CVD and ALD method for the deposition of Pt-Ru binary catalysts on Si(111) substrate. Ru catalyst deposition by CVD method, the different regimes of reactions kinetics were taken place on different substrate, which resulted in different morphology of Ru catalyst by using bis(ethylcyclopentadienyl) ruthenium as precursor. Since Ru depositions were controlled by adsorption of precursor, Ru catalysts were more difficult applied by ALD method than by CVD method. The hydrogen was used as the reactive gas to react with trimethylcyclopentadienyl platinum for Pt ALD. Close to 1 ML deposition of Pt can be achieved at substrate temperatures of 300 and 350oC. 2s exposure time of purge obtained good result for 4s exposure time of precursor but not enough when exposure time of precursor was increased to 6s. Increasing exposure time of hydrogen as the reactive gas resulted in a quite low growth rate because the hydrogen would remove the precursor, though they might not react to each other. Combination of Ru CVD and Pt ALD methods applied in DMFCs using oxygen as reactive gas gave the better performance compared with using hydrogen gas. Moreover, the CO poison of Pt catalysts can be eliminated by the combination of Ru CVD and Pt ALD methods.
author2 Lu-Sheng Hong
author_facet Lu-Sheng Hong
Sriana Tun
史安菟
author Sriana Tun
史安菟
spellingShingle Sriana Tun
史安菟
Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate
author_sort Sriana Tun
title Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate
title_short Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate
title_full Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate
title_fullStr Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate
title_full_unstemmed Combination of Chemical Vapor Deposition and Atomic Layer Deposition Method for Pt-Ru Catalyst Deposition on Si(111) Substrate
title_sort combination of chemical vapor deposition and atomic layer deposition method for pt-ru catalyst deposition on si(111) substrate
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/03557303134725953357
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