Heteroepitaxy and Optical Characterization of GaAs III-V Materials Grown on Si Nanostructure
碩士 === 國立臺灣大學 === 電子工程學研究所 === 97 === In this thesis, the heteroepitaxy and optical properties of GaAs grown on planar Si wafer and Si nanostructure by gas-source molecular beam epitaxy (GSMBE) have been investigated. First, the GaAs on planar Si wafer contains high density of structural defects suc...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35879581949113786990 |