SiGe Quantum-Well/Quantum-Dot Devices and Saddle FinFETs
博士 === 國立臺灣大學 === 電子工程學研究所 === 97 === In this dissertation, the SiGe metal-insulator-semiconductor devices are studied and we divide into the experiment part and the simulation part. First, the blockage of hole transport due to excess holes in SiGe dots was observed in the metal-oxide-semiconductor...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/30023899608742608322 |