Characterization of Structural and Electronic Properties of Amorphous HfO2 and Hf1-xSixO2 using First Principles Calculations and Molecular Dynamics Simulations
碩士 === 國立臺灣大學 === 材料科學與工程學研究所 === 97 === Due to the continuous down-scaling of the CMOS transistors, the conventional gate dielectric layers, SiO2, has become so thin that it may lead to large leakage current and thus degrade the reliability of devices. To solve this problem, the current trend is to...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76995843710382972199 |