High Performance Transparent Thin Film Transistors Based on Indium Oxide/Gallium Oxide Super-Lattice Structure
碩士 === 國立臺灣大學 === 光電工程學研究所 === 97 === We report a fabrication method to realize transparent thin film transistors (TFTs) at room temperature using radio frequency (RF) sputtered In2O3/Ga2O3 materials. The transmission line method (TLM) was used to examine the relationship between the resistivity of...
Main Authors: | Hong-Wei Kuo, 郭宏瑋 |
---|---|
Other Authors: | 彭隆瀚 |
Format: | Others |
Language: | zh-TW |
Published: |
2009
|
Online Access: | http://ndltd.ncl.edu.tw/handle/54255817254886869693 |
Similar Items
-
Fabrication and Analysis of Indium Gallium Zinc Oxide Transparent Thin Film Transistors
by: Peng-YuSu, et al.
Published: (2010) -
Study on Vertical Indium-Gallium-Zinc Oxide Thin-Film Transistors
by: CHEN, CHUN-YUAN, et al.
Published: (2019) -
Study on Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
by: Tsung-Te Lin, et al.
Published: (2011) -
Optimized Indium Gallium Zinc Oxide Films Applied to Thin-Film Transistors
by: Yung-HaoLin, et al.
Published: (2016) -
Process optimization of Indium oxide for transparent thin-film transistors
by: Jhih-Sheng Huang, et al.
Published: (2008)