Electroluminescence properties of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 97 === Current-voltage (I-V) and luminescence-current (L-I) measurements were performed to investigate the effect the electron blocking layer (EBL) on the electrical and optical properties of the InGaN/GaN multiple quantum wells (MQWs) based blue light emitting diodes...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97400109194095846415 |