| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 97 === Zinc oxide and copper-doped zinc oxide thin films are deposited on SiO2/Si(P+) substrate in this study using RF magnetron sputtering method. These films, after annealing treatments under nitrogen atmosphere, are used for characterization and analysis using Photo-Luminescence, Raman scattering, XRD diffraction, Scanning Electronic Microscope (SEM), and Atomic Force Microscope (AFM) etc., and they are used for fabricating Electro-Luminescent devices. In terms of the fabrication of component, p-N heterojunction Electro-Luminescent components are fabricated using zinc oxide and copper-doped zinc oxide thin films; the composition of the component is:
(1) ITO/ZnO/SiO2/Si(P+)/Al;
(2)ITO/ZnO:Cu/SiO2/Si(P+)/Al, and the effect of annealing temperature to the luminescence of the component is explored. The research results point out: among the zinc oxide thin films 850°C annealing under nitrogen atmosphere have a better crystalline structure, and a smaller FWHM taken alone the orientations of (100), (002), (101), and (102). From the PL spectrum analysis, it can be seen that those samples with 850°C annealing have the highest luminescence. Among copper-doped zinc oxide thin films in nitrogen atmosphere, 850 ℃ annealing by an hour has good crystallization and spectral properties. Zinc oxide and copper-doped zinc oxide thin films are deposited on SiO2/Si (P +) substrate in this experiment using RF magnetron sputtering system to fabricate p-N heterojunction Electro-Luminescent components. The fabrication ZnO EL devices has a broad EL spectrum in the region of 460~520 nm(yellow-green).In addition, The fabrication ZnO:Cu EL devices has a broad EL spectrum in the region of 520~620 nm(orange- yellow).
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