The Switch Devices of 3D IC for Memory and High Dielectric Constant for SiGe Transistors

• Main Authors: Wei-Hung Liu, 劉韋宏
• Other Authors: Min-Hung Lee
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/54064112118977375012

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 97 === Now the compact and high-performance electronic products are world-widely used in our life. The integration of system is significant for novel electronics. The trend of electronics is the 3D stack integration circuit (3D IC) which has a lot of advantage: compact, low power, low cost, and high compatibility for CMOS process. In chapter 2, the switch devices of 3D IC were fabricated by a continuous process on single-crystal silicon wafers. In order to improve the design of device, we used TCAD simulation for optimizing results of the device. In the experiments, the electrical characterization and measurement results of vertical poly-Si p-n diode switch are almost equal to the results of simulation, and the ideal factor η is 1.2~1.9 of this device. When the device is biased at 1.8 V, the current density is 1.5x102 A/cm2, and the on/ off ratio reaches ~107. In chapter 3, in order to improve the compatibility with the bi-polar memory device (ex: RRAM), the n/ p/ n junctions bi-directional diode is used as a bi-direction control unit. In chapter 4, we fabricated the NFETs with metal gate (TiN) and the high-k dielectric layer (HfSiOx) in the different crystal orientations. Therefore, the threshold voltage VT, sub-threshold swing S.S, saturation current IDsat, and the leakage current were measured totally for the characterization of the above NFETs.