Nanolithography by Opto-thermal Effect of Phase-change Thin Film
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 97 === In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are...
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ndltd-TW-097NTNU56140112015-10-13T12:04:58Z http://ndltd.ncl.edu.tw/handle/01953895379874524060 Nanolithography by Opto-thermal Effect of Phase-change Thin Film 相變化薄膜光熱效應奈米微影 Shiue Chiun Da 薛群達 碩士 國立臺灣師範大學 光電科技研究所 97 In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are measured by Lycra spectrometer and surface profile. And we use the optical pump-probe system and atomic force microscopy (AFM) to manufacture the sample and investigate the topographic change. Through the complete experiments, results showed the etching of the crystalline film is fast than the as-deposited Ge2Sb2Te5 film. The disordered amorphous region acts as an resistant mask. A novel high throughput and low cost nanolithography method is developed by the Ge2Sb2Te5 phase-change masking thin films. The special Opto-thermal effect of phase-change material can be applied to the Nanolithography in the future. Din Ping Tsai 蔡定平 2009 學位論文 ; thesis 87 zh-TW |
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碩士 === 國立臺灣師範大學 === 光電科技研究所 === 97 === In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are measured by Lycra spectrometer and surface profile. And we use the optical pump-probe system and atomic force microscopy (AFM) to manufacture the sample and investigate the topographic change. Through the complete experiments, results showed the etching of the crystalline film is fast than the as-deposited Ge2Sb2Te5 film. The disordered amorphous region acts as an resistant mask. A novel high throughput and low cost nanolithography method is developed by the Ge2Sb2Te5 phase-change masking thin films. The special Opto-thermal effect of phase-change material can be applied to the Nanolithography in the future.
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author2 |
Din Ping Tsai |
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Din Ping Tsai Shiue Chiun Da 薛群達 |
author |
Shiue Chiun Da 薛群達 |
spellingShingle |
Shiue Chiun Da 薛群達 Nanolithography by Opto-thermal Effect of Phase-change Thin Film |
author_sort |
Shiue Chiun Da |
title |
Nanolithography by Opto-thermal Effect of Phase-change Thin Film |
title_short |
Nanolithography by Opto-thermal Effect of Phase-change Thin Film |
title_full |
Nanolithography by Opto-thermal Effect of Phase-change Thin Film |
title_fullStr |
Nanolithography by Opto-thermal Effect of Phase-change Thin Film |
title_full_unstemmed |
Nanolithography by Opto-thermal Effect of Phase-change Thin Film |
title_sort |
nanolithography by opto-thermal effect of phase-change thin film |
publishDate |
2009 |
url |
http://ndltd.ncl.edu.tw/handle/01953895379874524060 |
work_keys_str_mv |
AT shiuechiunda nanolithographybyoptothermaleffectofphasechangethinfilm AT xuēqúndá nanolithographybyoptothermaleffectofphasechangethinfilm AT shiuechiunda xiāngbiànhuàbáomóguāngrèxiàoyīngnàimǐwēiyǐng AT xuēqúndá xiāngbiànhuàbáomóguāngrèxiàoyīngnàimǐwēiyǐng |
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1716852863904251904 |