Nanolithography by Opto-thermal Effect of Phase-change Thin Film

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 97 === In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are...

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Main Authors: Shiue Chiun Da, 薛群達
Other Authors: Din Ping Tsai
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/01953895379874524060
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spelling ndltd-TW-097NTNU56140112015-10-13T12:04:58Z http://ndltd.ncl.edu.tw/handle/01953895379874524060 Nanolithography by Opto-thermal Effect of Phase-change Thin Film 相變化薄膜光熱效應奈米微影 Shiue Chiun Da 薛群達 碩士 國立臺灣師範大學 光電科技研究所 97 In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are measured by Lycra spectrometer and surface profile. And we use the optical pump-probe system and atomic force microscopy (AFM) to manufacture the sample and investigate the topographic change. Through the complete experiments, results showed the etching of the crystalline film is fast than the as-deposited Ge2Sb2Te5 film. The disordered amorphous region acts as an resistant mask. A novel high throughput and low cost nanolithography method is developed by the Ge2Sb2Te5 phase-change masking thin films. The special Opto-thermal effect of phase-change material can be applied to the Nanolithography in the future. Din Ping Tsai 蔡定平 2009 學位論文 ; thesis 87 zh-TW
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language zh-TW
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description 碩士 === 國立臺灣師範大學 === 光電科技研究所 === 97 === In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are measured by Lycra spectrometer and surface profile. And we use the optical pump-probe system and atomic force microscopy (AFM) to manufacture the sample and investigate the topographic change. Through the complete experiments, results showed the etching of the crystalline film is fast than the as-deposited Ge2Sb2Te5 film. The disordered amorphous region acts as an resistant mask. A novel high throughput and low cost nanolithography method is developed by the Ge2Sb2Te5 phase-change masking thin films. The special Opto-thermal effect of phase-change material can be applied to the Nanolithography in the future.
author2 Din Ping Tsai
author_facet Din Ping Tsai
Shiue Chiun Da
薛群達
author Shiue Chiun Da
薛群達
spellingShingle Shiue Chiun Da
薛群達
Nanolithography by Opto-thermal Effect of Phase-change Thin Film
author_sort Shiue Chiun Da
title Nanolithography by Opto-thermal Effect of Phase-change Thin Film
title_short Nanolithography by Opto-thermal Effect of Phase-change Thin Film
title_full Nanolithography by Opto-thermal Effect of Phase-change Thin Film
title_fullStr Nanolithography by Opto-thermal Effect of Phase-change Thin Film
title_full_unstemmed Nanolithography by Opto-thermal Effect of Phase-change Thin Film
title_sort nanolithography by opto-thermal effect of phase-change thin film
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/01953895379874524060
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AT xuēqúndá xiāngbiànhuàbáomóguāngrèxiàoyīngnàimǐwēiyǐng
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