| Summary: | 碩士 === 國立清華大學 === 工程與系統科學系 === 97 === In order to improve the interfacial conductance and suppress interfacial recombination between TiO2 porous layer and F-doped SnO2 transparent conductive layer (FTO) of dye-sensitized solar cells (DSSCs), three different work function metal titanium (Ti), aluminum (Al), palladium (Pd) thin-film were deposited by sputtering on FTO. Only for high transmittance and low work function metal Ti can enhance DSSCs photovoltaic properties. High transmittance of Ti thin-film helps the light harvesting efficiency (LHE), and low work function of Ti (4.33 eV), after contacted with porous TiO2 layer was formed proper Ohmic contact and blocking layer. It could help electrons transport into FTO smoothly and prevent the back reaction. The Ti-deposited thin film DSSCs give the significantly improvement of the short-circuit photocurrent density (Jsc) about 24% over that of standard (bare-FTO) cell, finally
resulting in a 4.65% energy conversion efficiency (η), which is about 20% higher than that of standard one. In incident monochromatic photon-to-current conversion
efficiency (IPCE) spectra, Ti-deposited DSSCs also reveal higher value than Al and Pd-deposited DSSCs.
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