Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue

碩士 === 國立清華大學 === 電機工程學系 === 97 === In this thesis, we propose the baseline operation modes, which specify these situations of memory power consumption, and used for dual-power SRAM, in reality. This methodology of classification is based on the power mode we proposed previous, MUX-Oriented power mo...

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Main Authors: Tai, Tsai-Yuan, 戴才淵
Other Authors: Huang, Shi-Yu
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/62991901868320550423
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spelling ndltd-TW-097NTHU54420332015-10-13T14:52:52Z http://ndltd.ncl.edu.tw/handle/62991901868320550423 Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue 使用多工器導向功率估測模型對雙埠靜態隨機存取記憶體之功率消耗型別分類並兼顧漏電流議題 Tai, Tsai-Yuan 戴才淵 碩士 國立清華大學 電機工程學系 97 In this thesis, we propose the baseline operation modes, which specify these situations of memory power consumption, and used for dual-power SRAM, in reality. This methodology of classification is based on the power mode we proposed previous, MUX-Oriented power modeling, with high accuracy and parameterizeable features. We also apply the symmetry property and summation property to baseline operation modes and succeed in simplifying these modes from nine types to three types only. Besides, a special operation mode, deselected mode, is discussed, and combined with our operation modes to make it stronger and fit for any operations. Leakage power dissipation is an import issue and also be discussed use a white-box methodology in this thesis. Validation set are used to demonstrate that all of these operation modes we proposed have an average predicting error with 3%~6%, and only 1.1% for leakage memory power consumption. Huang, Shi-Yu 黃錫瑜 2009 學位論文 ; thesis 48 en_US
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language en_US
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description 碩士 === 國立清華大學 === 電機工程學系 === 97 === In this thesis, we propose the baseline operation modes, which specify these situations of memory power consumption, and used for dual-power SRAM, in reality. This methodology of classification is based on the power mode we proposed previous, MUX-Oriented power modeling, with high accuracy and parameterizeable features. We also apply the symmetry property and summation property to baseline operation modes and succeed in simplifying these modes from nine types to three types only. Besides, a special operation mode, deselected mode, is discussed, and combined with our operation modes to make it stronger and fit for any operations. Leakage power dissipation is an import issue and also be discussed use a white-box methodology in this thesis. Validation set are used to demonstrate that all of these operation modes we proposed have an average predicting error with 3%~6%, and only 1.1% for leakage memory power consumption.
author2 Huang, Shi-Yu
author_facet Huang, Shi-Yu
Tai, Tsai-Yuan
戴才淵
author Tai, Tsai-Yuan
戴才淵
spellingShingle Tai, Tsai-Yuan
戴才淵
Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue
author_sort Tai, Tsai-Yuan
title Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue
title_short Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue
title_full Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue
title_fullStr Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue
title_full_unstemmed Power Modes Classification for Dual-Port SRAM Based on MUX-Oriented Power Modeling with Leakage Issue
title_sort power modes classification for dual-port sram based on mux-oriented power modeling with leakage issue
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/62991901868320550423
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