Novel 600V-Class Charge-Balance-Enhanced Super Junction Power MOSFET (CBE-SJ MOS)
碩士 === 國立清華大學 === 電子工程研究所 === 97 === In designing power devices using conventional P/N junctions, the tradeoff between breakdown voltage (Bv) and on-state resistance (Ron) has always been a major concern. Many studies have proposed various structures to sustain high Bv level while reducing the Ron....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36933591490408014783 |