Effects of the scaled charge trapping layer on SONOS type non-volatile memory
碩士 === 國立清華大學 === 電子工程研究所 === 97 === Recently, Flash technology is gradually migrated from floating-gate cells to charge-trapping devices due to lower operating voltage and two bits storage. However, it is also a great challenge to scale the conventional charge-trapping Flash cells for the need of h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93668147445726615028 |