Characterization of P- and N-type Zinc Oxide Films Prepared by RF Sputtering
碩士 === 國立中山大學 === 電機工程學系研究所 === 97 === In this study, the reactive rf magnetron sputtering was used to deposit P- and N-type zinc oxide (ZnO) thin films, Zinc oxide (ZnO) has higher exiton bindingenergy (60 meV) and high band gap (~3.4 eV) that can provide efficient ultraviolet (UV) light at room te...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vwvwmb |