Titanium Oxide Prepared by Liquid Phase Deposition and Acted as Gate Oxide on Thin Film Transistors
碩士 === 國立中山大學 === 電機工程學系研究所 === 97 === In this study, we deposit titanium dioxide (TiO2) as gate oxide on thin film transistor (TFT) by liquid phase deposition (LPD) on the amorphous silicon (a-Si) and polycrystalline silicon (poly-Si) substrates. After depositing LPD-TiO2 film, we use to fabricate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8bjtcg |