Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field
碩士 === 國立中山大學 === 物理學系研究所 === 97 === We discussed the electronic properties in AlxGa1-xN/GaN heterostructures. There are six different samples of AlxGa1-xN/GaN we prepared for this experiment, three of them are undoped AlxGa1-xN/GaN with different x values which is 0.17, 0.29 and 0.33, respectively....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49vuu4 |