Mapping of ESD Induced Defects on LEDs with Optical Beam Induced Current Microscopy
碩士 === 國立中山大學 === 光電工程學系研究所 === 97 === Optical beam induced current (OBIC) mapping has found wide-spread applications in characterizing semiconductor devices and integrated circuitry. In this study, we have used a two-photon scanning microscope to investigate InGaN light emitting diodes (LED). The d...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ey93rt |
| Summary: | 碩士 === 國立中山大學 === 光電工程學系研究所 === 97 === Optical beam induced current (OBIC) mapping has found wide-spread applications in characterizing semiconductor devices and integrated circuitry. In this study, we have used a two-photon scanning microscope to investigate InGaN light emitting diodes (LED). The defects induced by electrostatic discharge (ESD) can be clearly identified by DC-OBIC images.
Additionally, we have combined an E-O modulator and a high frequency phase sensitive lock-in amplifier to conduct time-resolved study on the dynamical properties of the LEDs. The defects also exhibit different delay time when compared with the normal parts.
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