The Study of the Application of P-Type Semiconductor Oxide on the Dye-Sensitized Solar Cells

• Main Authors: You-Jen Lin, 林友仁
• Other Authors: Chuen-Shii Chou
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/69487331616195268111

碩士 === 國立屏東科技大學 === 機械工程系所 === 97 === This study investigates the applicability of a p-type semiconductor oxide of a working electrode and a counter electrode on a dye-sensitized solar cell. The counter electrode was fabricated with Pt films substrated on FTO-glass using an ion sputtering coater and an E-beam evaporator, and was coated with a NiO thin film on the Pt thin film of the working electrode in a dye-sensitized solar cell (DSSC). For the working electrode, TiO2/NiO composite particles were applied on an FTO-glass (Fluorine doped tin oxide, SnO2: F) substrate of the working electrode in a DSSC. The surfaces of the counter electrodes were of varying roughness, and references were checked using atomic force microscopy (AFM) and with a UV-VIS-NIR Spectrophotometer. The DSSC of the working electrode was coated with a TiO2 thin 0.25 cm2 are film on an FTO-glass substrate. This had been soaked in a 0.5 mol of TiCl4 solution at a temperature of 70 ℃ for 30 minutes and sintered in a high temperature furnace, then immersed in N-719 (Ruthenium) dye under a temperature of 70 ℃ for 6 hours. Finally, the DSSC was assembled. Research on the working electrode prepared the TiO2 (P25) and Ni composite particles to use the Mechanofusion system. Dry particle coating was performed in order to coat the nano-sized Ni powder onto the surface of the TiO2 particles. Coating the colloid of the TiO2 and TiO2/Ni composite particles was done by depositing them on the top of the FTO-glass substrate (immersed in TiCl4 aqueous solutions) to form a semiconductor thin film, which was then sintered in a high temperature furnace. The nano Ni particles were oxidized to the p-type semiconductor NiO, which formed a TiO2/NiO composite semiconductor thin film whose surface area is 0.25 cm2. The working electrode with the TiO2/NiO thin film was coated with N-719 (Ruthenium) dye by immersing the plates in a solution at under 70 ℃ for 6 hours. Finally, the DSSC was assembled, and the short-circuit photocurrent, the open-circuit photovoltage, the fill factor and the power conversion efficiency of the DSSC were measured using the Science Tech 150 W I-V measurement system. This study, which facilitates the efficiency of dye-sensitized solar cells using the p-type semiconductor NiO, is presented to improve energy conversion efficiency. Most importantly, this study shows the power conversion efficiency η of the DSSC with a film of TiO2/NiO composite particles on a working electrode. η (3.8 %) transcends the power conversion efficiency of conventional DSSC (3.27 %) because the n-type and p-type semiconductors form a barrier which causes the inhibition of electron back transfer. When the Pt/NiO thin film of the DSSC on the counter electrode is applied, the η increases to 4.28 % because the coating NiO colloid on the Pt-FTO substrate respectively improves the BET and the electrocatalytic.