| Summary: | 碩士 === 國立東華大學 === 電機工程學系 === 97 === The cadmium sulfide films with the band gap of 2.4eV are the typical buffer layers for the high-efficiency Cu(In,Ga)Se2 solar cells presently. The high-efficiency Cu(In,Ga)Se2 solar cells with the buffers of zinc sulfide are achieved recently. Thus, we are interested in studying the material system of cadmium zinc sulfide.
The buffer layers of cadmium sulfide, zinc sulfide, and cadmium zinc sulfide thin films were deposited by the chemical-bath-deposition process. We investigated the features of cadmium sulfide and zinc sulfide films by changing the ammonium concentrations, and investigated the features of cadmium zinc sulfide by controlling the cadmium sulfate and zinc sulfate concentrations.
We found that the ammonium concentrations affect the band gap and grain size of as-deposited films. With the increase of the ammonium concentration, the grain size decreased and the band gap increased. The increase of the Zn/Cd ratio led to the high transmission and wide band for the prepared cadmium zinc sulfide films. The uniform and good adhesion of cadmium sulfide films and zinc sulfide films were achieved.
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