| Summary: | 碩士 === 國立東華大學 === 電子工程研究所 === 97 === Crystals of Ga2(Se1-xTex)3 compounds with x = 0, 0.2, 0.4, 0.6, 0.8 and were grown by vertical Bridgman method. The crystalline phase and stoichiometry of these crystals were investigated by X-ray diffraction, SEM, Raman spectroscopy and EPMA techniques. X-ray photoelectron spectroscopy (XPS) had been used to study the electronic structure of these compounds. The energy band gaps of Ga2(Se1-xTex)3 were examined by thermoreflectance (TR) as well as transmission measurements.
X-ray diffraction patterns and SEM analysis confirmcd that as-grown Ga2(Se1-xTex)3 crystals with x = 0, 0.6, 0.8 and 1, are single phase.
However, for x = 0.2 and 0.4, extra phases were found in these crystals. Information on the bonding in the crystals were obtained by measurements of XPS and Raman spectroscopy. Composition dependencies of the energy gap for the single phase crystals were evaluated.
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