Optical and electrical characterization of the InAlAs/InGaAs metamorphic high electron mobility transistor structures
碩士 === 國立彰化師範大學 === 電子工程學系 === 97 === We present the studies of two-dimensional electron gas (2DEG) in two (etched and nonetched) InGaAs/InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) structures using photoluminescence (PL), photoconductivity (PC), Hall and photo-Hall measuremen...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92713536478136698556 |