Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB

碩士 === 國立彰化師範大學 === 物理學系 === 97 === In this study, we use the synthetic antiferromagnet (SAF) of CoFeB(5 nm)/Ta(t nm)/CoFeB(5 nm) and changing the different nonmagnetic layer (Ta) thickness to discuss the RKKY oscillation behavior of the ferromagnetic coupling and the antiferromagnetic coupling. The...

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Main Author: 王介平
Other Authors: 洪連輝
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/04184625799766355023
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spelling ndltd-TW-097NCUE51980072015-10-13T12:05:45Z http://ndltd.ncl.edu.tw/handle/04184625799766355023 Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB CoFeB/Ta/CoFeB人工反鐵磁結構磁翻轉行為研究 王介平 碩士 國立彰化師範大學 物理學系 97 In this study, we use the synthetic antiferromagnet (SAF) of CoFeB(5 nm)/Ta(t nm)/CoFeB(5 nm) and changing the different nonmagnetic layer (Ta) thickness to discuss the RKKY oscillation behavior of the ferromagnetic coupling and the antiferromagnetic coupling. The ellipse dots are 500 nm and 800 nm ,and the L/W ratio of ellipse dots are 1, 1.5 and 2. We compare the switching mode of magnetization in the CoFeB monolayer, the ferromagnetic coupling of SAF structure and the antiferromagnetic coupling of SAF structure. The dot arrays are patterned in an area of 80 μm × 80 μm utilizing electron beam lithography and lift off technique. The hysteresis loops are measured by magneto-optical Kerr effect (MOKE) in thin films and dot arrays. We observe good antiferromagnetic coupling when Ta is 1.0 nm, and good ferromagnetic coupling when Ta is 2.0 nm. The SAF structure is easier switching than monolayer in the same array size. In the dot arrays, when aspect ratio are larger, the coercivity is increasing and the switching field is decreasing. 洪連輝 2009 學位論文 ; thesis 56 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立彰化師範大學 === 物理學系 === 97 === In this study, we use the synthetic antiferromagnet (SAF) of CoFeB(5 nm)/Ta(t nm)/CoFeB(5 nm) and changing the different nonmagnetic layer (Ta) thickness to discuss the RKKY oscillation behavior of the ferromagnetic coupling and the antiferromagnetic coupling. The ellipse dots are 500 nm and 800 nm ,and the L/W ratio of ellipse dots are 1, 1.5 and 2. We compare the switching mode of magnetization in the CoFeB monolayer, the ferromagnetic coupling of SAF structure and the antiferromagnetic coupling of SAF structure. The dot arrays are patterned in an area of 80 μm × 80 μm utilizing electron beam lithography and lift off technique. The hysteresis loops are measured by magneto-optical Kerr effect (MOKE) in thin films and dot arrays. We observe good antiferromagnetic coupling when Ta is 1.0 nm, and good ferromagnetic coupling when Ta is 2.0 nm. The SAF structure is easier switching than monolayer in the same array size. In the dot arrays, when aspect ratio are larger, the coercivity is increasing and the switching field is decreasing.
author2 洪連輝
author_facet 洪連輝
王介平
author 王介平
spellingShingle 王介平
Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB
author_sort 王介平
title Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB
title_short Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB
title_full Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB
title_fullStr Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB
title_full_unstemmed Study of Switching Mode of Magnetization in Synthetic Antiferromagnet of CoFeB/Ta/CoFeB
title_sort study of switching mode of magnetization in synthetic antiferromagnet of cofeb/ta/cofeb
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/04184625799766355023
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