| Summary: | 碩士 === 國立中央大學 === 光電科學研究所 === 97 === For mankind''s demand for the energy is greater and greater, it is necessary to develop renewable energies under limited resources. Solar energy plays an important role in the renewable energies, because it is inexhaustible. One of the most important components is hydrogenated silicon thin film solar cells. A lot of kinds of ideas for the solar cells have been proposed in recently. The commercial method to fabricate thin film solar cells is PECVD. However, the method has disadvantages such as high facility cost. In this research, a cheaper and without toxic method to produce the intrinsic layer of silicon thin film solar cell has been demonstrated.
To analyze the characteristics of the different crystalline structures, high-efficiency hygrogenated microcrystalline silicon thin film solar cell can be achieved when the silicon film is transition type which photosensitivity can be larger than two order. Besides, positive bias voltage has been applied on the substrate to improve the crystallization under the same thickness. After combining the process of transition type silicon with the positive bias voltage, the crystallation fraction of the film can be increased and the photosensitivity can also higher than two order.
If we applied negative bias voltage on the substrate, the films become denser and less voids to reach two order in photosensitivity for the transition type of silicon. The results show the way to fabricate silicon thin film solar cells using spattering method.
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