Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption

碩士 === 國立中央大學 === 環境工程研究所 === 97 === Perfluorinated compounds (PFCs) are widely used in semiconductor industry for chemical vapor deposition (CVD) and dry etching. PFCs have strong apacities on infrared rays absorption, they will aggravate global warming once emitted into the atmosphere. Among the d...

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Main Authors: Ching-tse Huang, 黃晴澤
Other Authors: Moo Been Chang
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/25023551143897120572
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spelling ndltd-TW-097NCU055150512015-11-16T16:09:06Z http://ndltd.ncl.edu.tw/handle/25023551143897120572 Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption 以非熱電漿結合吸附劑處理C3F8之研究 Ching-tse Huang 黃晴澤 碩士 國立中央大學 環境工程研究所 97 Perfluorinated compounds (PFCs) are widely used in semiconductor industry for chemical vapor deposition (CVD) and dry etching. PFCs have strong apacities on infrared rays absorption, they will aggravate global warming once emitted into the atmosphere. Among the diverse strategies for PFCs removal, the abatement techniques is still the most available one. Combustion and catalytic oxidation are commonly used approaches for reducing PFC emissions. However, relatively high fuel cost and potential poisoning of catalyst limit their further application. This study investigates the effectiveness of plasma combined with adsorbent for C3F8 removal. The experimental results indicate Bead-shape activated carbon has the best adsorption capacity, the reason supposed to be the oxygen functional groups at adsorbent surface would affect the adsorption capacity of C3F8. Adsorbent after plasma treatment will decrease BET surface area and increase average pore diameter, and the amount of oxygen functional groups at surface increase as well. The removal efficiency of C3F8 increased with application of oxygen content. However, removal efficiency of C3F8 was found to decrease if more than 2% of oxygen was applied. The removal efficiency and product selectivity of C3F8 achieved with plasma combined with adsorbent were significantly higher than those without adsorbent of might result from the fact that adorbent can extend the retention time of C3F8. Experimental results indicate that plasma combined with adsorbent for C3F8 removal was technically feasible. Moo Been Chang 張木彬 2009 學位論文 ; thesis 90 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中央大學 === 環境工程研究所 === 97 === Perfluorinated compounds (PFCs) are widely used in semiconductor industry for chemical vapor deposition (CVD) and dry etching. PFCs have strong apacities on infrared rays absorption, they will aggravate global warming once emitted into the atmosphere. Among the diverse strategies for PFCs removal, the abatement techniques is still the most available one. Combustion and catalytic oxidation are commonly used approaches for reducing PFC emissions. However, relatively high fuel cost and potential poisoning of catalyst limit their further application. This study investigates the effectiveness of plasma combined with adsorbent for C3F8 removal. The experimental results indicate Bead-shape activated carbon has the best adsorption capacity, the reason supposed to be the oxygen functional groups at adsorbent surface would affect the adsorption capacity of C3F8. Adsorbent after plasma treatment will decrease BET surface area and increase average pore diameter, and the amount of oxygen functional groups at surface increase as well. The removal efficiency of C3F8 increased with application of oxygen content. However, removal efficiency of C3F8 was found to decrease if more than 2% of oxygen was applied. The removal efficiency and product selectivity of C3F8 achieved with plasma combined with adsorbent were significantly higher than those without adsorbent of might result from the fact that adorbent can extend the retention time of C3F8. Experimental results indicate that plasma combined with adsorbent for C3F8 removal was technically feasible.
author2 Moo Been Chang
author_facet Moo Been Chang
Ching-tse Huang
黃晴澤
author Ching-tse Huang
黃晴澤
spellingShingle Ching-tse Huang
黃晴澤
Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption
author_sort Ching-tse Huang
title Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption
title_short Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption
title_full Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption
title_fullStr Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption
title_full_unstemmed Removal of C3F8 via the Combination of Nonthermal Plasma and Adsoption
title_sort removal of c3f8 via the combination of nonthermal plasma and adsoption
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/25023551143897120572
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AT chingtsehuang yǐfēirèdiànjiāngjiéhéxīfùjìchùlǐc3f8zhīyánjiū
AT huángqíngzé yǐfēirèdiànjiāngjiéhéxīfùjìchùlǐc3f8zhīyánjiū
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