Fabrication and Characterization of Multi-Bit Nonvolatile Memory Cell with Ge Nanocrystals
碩士 === 國立中央大學 === 電機工程研究所 === 97 === Current requirements of nonvolatile memory (NVM) for the scaling down device are high density cells, low-power consumption, high-speed operation and good reliability. The nonvolatile memories with nanocrystals are one of promising candidates to substitute for t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uhcpfe |