Enhancement-mode Pseudomorphic High Electron Mobility Transistor Model and Microwave Power Amplifier
碩士 === 國立中央大學 === 電機工程研究所 === 97 === Power amplifier is a very important component in the wireless transmitter. The high performance power amplifier must depend on accurate nonlinear device model. In this thesis, an accurate nonlinear model and a high linearity power amplifier are designed, analyzed...
Main Authors: | Ya-wen Yang, 楊雅雯 |
---|---|
Other Authors: | Yue-ming Hsin |
Format: | Others |
Language: | zh-TW |
Published: |
2009
|
Online Access: | http://ndltd.ncl.edu.tw/handle/98383367635348155630 |
Similar Items
-
Study of Double Heterojunction Power Pseudomorphic High Electron Mobility Transistor
by: Ying-Chern Shiau, et al.
Published: (2000) -
Noise Modeling of Pseudomorphic High Electron Mobility Transistor
by: Tzu-yen Hsiao, et al. -
Characteristics of pseudomorphic high electron mobility transistor under different temperature
by: Chuang-Jeu Yang, et al.
Published: (2003) -
The study of Enhancement-mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor
by: LI HSIN CHU, et al.
Published: (2007) -
Studies on InGaP Heterojunction Bipolar Transistors and Pseudomorphic High Electron Mobility Transistors.
by: Chung-Er Huang, et al.
Published: (2003)