Ultraviolet Light Protective Layer for OTFTs Encapsulation

• Main Authors: Chun Chieh Fang, 方俊傑
• Other Authors: Hsiao Wen Zan
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/28361866999927670765

碩士 === 國立交通大學 === 顯示科技研究所 === 97 === In this thesis, we fabricated N,N′-bis(naphthalen-1-y)-N,N′-bis(phenyl) benzidine (NPB) passivation to protect the organic thin-film transistors (OTFTs) from degradation under UV-light illumination. With a thermally-deposited NPB film on the OTFTs, it was found that UV-light induced degradation could be significantly reduced. For example, after about 120 minutes UV-light the change of field effect mobility was only 37 % and the change of threshold voltage was within 10%. On the contrary, the OTFTs without NPB film suffered serious degradation. The field-effect mobility was reduced by about 90%, and the threshold voltage was increased by more than 40%. UV-light induced degradation on OTFTs was also discussed; Through surface morphology analysis by atomic force microscopy ( AFM ) and electron Spectroscopy for Chemical Analysis ( ESCA ) , the surface oxidation and destroyed pentacene grains pentacene film was the dominative factor that influenced OTFT’s properties. We conclude that our NPB passivation is a promising way to protect pentacene TFTs. Finally, I would like to address that the work is conducted under the leading of my supervisor and also Mr. Kuo-His Yen, Ph. D student in our lab. The result is shared with all the co-workers in this research.