| Summary: | 碩士 === 國立交通大學 === 電機學院微電子奈米科技產業專班 === 97 === In this thesis, we introduce next-generation nonvolatile memory and focus on resistance random access memory (RRAM) research. The RRAM has bistable resistive switching characteristic which can exhibit two states of different resistance for logic level. Therefore RRAM can be next-generation memory by using this characteristic. Owing to RRAM has excellent characteristics of high-speed operation, low-power, and high-density integration. In addition to its simple cell structure (Metal-oxide-metal tri-layer), CMOS-friendly materials and low process temperature all are advantages for next-generation memory application.
RRAM is fabricated with aluminum oxide thin film on Pt bottom electrode by RF magnetron sputter and chose Ti for top electrode. First, we have some material analyses of aluminum oxide thin film. The physical, electrical properties and reliability issue of RRAM would be reported. From those analyses conduction mechanism and switching mechanism could be driven. Compare to other top electrode metals, the memory device has the best device yield, stable bipolar resistive switching performance and self-compliance characteristic by using Ti top electrode. Finally, a solvent is proposed to improve the disadvantage of electrical characteristics for our device. It made the device potential for next-generation memory application.
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