Energy contamination control in ultra-low energy ion implantation
碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 97 === With the flourishing development of semiconductor technology。The layout of the integrated circuit is more and more complicated，and the transistor size is more and more tiny also. It is the certain result that the current channel becomes shorter below...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74220980848017354632 |
| Summary: | 碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 97 === With the flourishing development of semiconductor technology。The layout of the integrated circuit is more and more complicated，and the transistor size is more and more tiny also.
It is the certain result that the current channel becomes shorter below the gate electrode due to the transistor size. But it is impossible to reduce the channel size unlimitedly or the electric effect will be emerged from that. For example：Short Channel Effect。
For improve the issue above，the energy contamination in ultra-low implantation of the Ultra-Shallow Junction becomes very important.
The Drift-Mode is the ideal mode for the current ion implanter machine。 Due to the beam current is the same through the whole beam line path。
Due to space charge limits in low energy ion beam transport，it is necessary to extract ion beams at high energy then to the target energy。 It will affect the current beam current below the target then lower production rate。
For solve the issue，the decel mode is the more effective method。 It is use the higher extract energy then decelerate to the target energy before implant to the wafer。 But the Energy Contamination will appear during the implantation。Energy Contamination due to energetic neutral particles that result from charge exchanges between beam ions and beamline residual gas molecules before and during deceleration。
The thesis will use the single prototype ion implanter be the experiment equipment，and verify the energy contamination in ultra-low energy implantation by the bias of the electrical field。
In additional，the experiment result will be verified then analysis by the low boron energy implantation below：
�� RS Matching Analysis（RS、SIMS）
�� Boron Activation Analysis（RS-Xj Chart）
�� EOR Damage Analysis（XTEM）
�� Dose retation condition after PR strip（RS、SIMS）
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