The Characteristics of Hafnium-Based Thin Film by Sol-Gel Spinning Techniques with Different Post Annealing Temperatures Treatment
碩士 === 國立交通大學 === 理學院IC製程化學產業專班 === 97 === The scaling of silicon-based microelectronics devices has led to large leakage current of the silicon dioxide layer as a gate dielectric. It is necessary to replace the SiO2 with high dielectric constant (high-κ) oxides. The sol-gel method has attracted...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28010987800274279215 |