A Study of Electrical Transport properties of One-Dimensional PbMnSe Quantum–Dot Arrays
碩士 === 國立交通大學 === 理學院碩士在職專班應用科技學程 === 97 === The purpose of the research is to make PbMnSe quantum-dot array device with good contacts by using a standard dielectrophoresis method. We have fabricated six devices for electrical characterizations. The devices are positioned in a cryostat for a change...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03697524129796492179 |
| Summary: | 碩士 === 國立交通大學 === 理學院碩士在職專班應用科技學程 === 97 === The purpose of the research is to make PbMnSe quantum-dot array device with good contacts by using a standard dielectrophoresis method. We have fabricated six devices for electrical characterizations. The devices are positioned in a cryostat for a change of environmental temperature from 300 K down to 80 K. We have obtained temperature dependent current-voltage curves of the six devices. We have calculated the temperature dependent resistance of our devices as well.
We found that, in a temperature range of 80–300 K, the current-voltage of the nanoarray devices display a linear dependence. In addition, the resistances of our devices reveal negative temperature dependences and display semiconducting behaviors. The temperature behavior can be fitted well with the theoretical model of the fluctuation-induced tunneling effect.
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