The Study of Solid-state Diode Based on WO3/IrO2 in Low Temperature State and Natural Gas Sensing

碩士 === 國立交通大學 === 電子物理系所 === 97 === The main research of this article was about the solid-state diode based on WO3 / IrO2 , which in low temperature state and natural gas sensing . The mechanism of the device was based on double injection, which IrO2 thin film may have H+. When we plus e-and H+,the...

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Bibliographic Details
Main Authors: Chang, Chia-Feng, 張家鳳
Other Authors: Chao, Shu-Chi
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/71766109073092675572
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Summary:碩士 === 國立交通大學 === 電子物理系所 === 97 === The main research of this article was about the solid-state diode based on WO3 / IrO2 , which in low temperature state and natural gas sensing . The mechanism of the device was based on double injection, which IrO2 thin film may have H+. When we plus e-and H+,the diode in the reversible redox reaction.The experiment results show that:The Vonset increasing as the temperature decreasing when putting the diode device into the low temperature equipment setup. And in the gas sensing study, the sensitivity will be improved when we doped small amount of iridium.The electric property will be affected when injected the devices with natural gas. We can determine the concentration of natural gas by measuring current.