Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
碩士 === 國立交通大學 === 電子工程系所 === 97 === In this study, we measured the I-V and absorption characteristics of strained Ge:Ga samples at cryogenic temperature (10 K). As the stress increases along the [100] and [110] direction, the breakdown voltage increases to a maximum around 0.5-1 kBar and then decrea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33967337599391835205 |