Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress

碩士 === 國立交通大學 === 電子工程系所 === 97 === In this study, we measured the I-V and absorption characteristics of strained Ge:Ga samples at cryogenic temperature (10 K). As the stress increases along the [100] and [110] direction, the breakdown voltage increases to a maximum around 0.5-1 kBar and then decrea...

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Main Authors:	Lee, Chih-Haw, 李志浩
Other Authors:	Yen, Shun-Tung
Format:	Others
Language:	zh-TW
Published:	2009
Online Access:	http://ndltd.ncl.edu.tw/handle/33967337599391835205

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spelling	ndltd-TW-097NCTU54281282015-10-13T15:42:32Z http://ndltd.ncl.edu.tw/handle/33967337599391835205 Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress 單軸應力下P型鍺之電性與兆赫波吸收頻譜之研究 Lee, Chih-Haw 李志浩碩士國立交通大學電子工程系所 97 In this study, we measured the I-V and absorption characteristics of strained Ge:Ga samples at cryogenic temperature (10 K). As the stress increases along the [100] and [110] direction, the breakdown voltage increases to a maximum around 0.5-1 kBar and then decreases. The absorption spectra show that the energy differences between the ground states and the excited states also increase to a maximum then decrease in the same stress region. According to these results, we can propose a mechanism to explain the stress dependence of breakdown voltage. Our experiment is in agreement with the theoretical predictions. Yen, Shun-Tung 顏順通 2009 學位論文 ; thesis 41 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電子工程系所 === 97 === In this study, we measured the I-V and absorption characteristics of strained Ge:Ga samples at cryogenic temperature (10 K). As the stress increases along the [100] and [110] direction, the breakdown voltage increases to a maximum around 0.5-1 kBar and then decreases. The absorption spectra show that the energy differences between the ground states and the excited states also increase to a maximum then decrease in the same stress region. According to these results, we can propose a mechanism to explain the stress dependence of breakdown voltage. Our experiment is in agreement with the theoretical predictions.
author2	Yen, Shun-Tung
author_facet	Yen, Shun-Tung Lee, Chih-Haw 李志浩
author	Lee, Chih-Haw 李志浩
spellingShingle	Lee, Chih-Haw 李志浩 Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
author_sort	Lee, Chih-Haw
title	Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
title_short	Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
title_full	Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
title_fullStr	Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
title_full_unstemmed	Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress
title_sort	studies on electrical properties and terahertz absorption spectrum of p-ge under uniaxial stress
publishDate	2009
url	http://ndltd.ncl.edu.tw/handle/33967337599391835205
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Studies on Electrical Properties and Terahertz Absorption Spectrum of p-Ge under uniaxial stress

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