Research and Process Development of Titanium-based Nanocrystals for Nonvolatile Memory
碩士 === 國立交通大學 === 電子工程系所 === 97 === Abstract Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for the scaling down devices. However, all of the charges stored in the floating gate will leak into the substra...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28943434700592480351 |