On Distinguishing Process Corner for Yield Improvement in Memory Compiler Generated SRAM

碩士 === 國立交通大學 === 電子工程系所 === 97 === As the technology scales down to nanometer, the yield degradation caused by inter-die variations is getting worse. Using adaptive body bias is an effective method to eliminate the yield degradation, however we need to know a die having high threshold voltage or lo...

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Bibliographic Details
Main Authors: Chia-Chi Hsiao, 蕭家棋
Other Authors: Hung-Ming Chen
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/13124971355873543191

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