Transport Analysis and the Reliability Correlation in Nanoscale Strained-Silicon Devices

• Main Authors: Derrick W. Chang, 張文彥
• Other Authors: Steve S. Chung
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/12743621279644917993

碩士 === 國立交通大學 === 電子工程系所 === 97 === The modern devices are operated at near-ballistic conditions. Therefore, the conventional model of devices should be corrected by the carriers transport model. The SiGe on S/D pMOS devices called as uniaxial compressive strained-Si devices have higher injection velocity, but they have worse ballistic than others. The SiGe channel pMOS devices also called as biaxial compressive strained-Si devices have higher ballistic than others, but they degrade seriously in ballistic after HC stress. As applying the same hot carrier stress condition, the uniaxial and biaxial strained-Si pMOS devices showed the same degradation with the conventional reliability measurements. However, these two kinds of devices have different variation in transport parameters. After HC stress, the control nMOS devices dropped their ballistic and others increased oppositely. Base on this point of view, we were interested in the critical barrier near by the source side. Thus, this work developed a wholly new method to calculate the variation of this critical barrier. The results showed that the barriers became sharper and independent of the ballistic. This is the first time to investigate the reliability issues with the transport parameters, and a new method for evaluating the variation of critical barrier is deduced.