Transport Analysis and the Reliability Correlation in Nanoscale Strained-Silicon Devices
碩士 === 國立交通大學 === 電子工程系所 === 97 === The modern devices are operated at near-ballistic conditions. Therefore, the conventional model of devices should be corrected by the carriers transport model. The SiGe on S/D pMOS devices called as uniaxial compressive strained-Si devices have higher injection ve...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12743621279644917993 |