Characteristics and Investigation of Reoxidation Behavior on ONO Stacked Flash Memory with Robust Tunneling oxynitride
碩士 === 國立交通大學 === 電子工程系所 === 97 === In out experiment, we used the oxynitride as the tunneling oxide because the stress induced leakage current may cause the increase of interface-trap density between silicon substrate and tunneling oxide during the programming and erasing cycles for convention oxid...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02174313656689376927 |