Charge Trapping and De-trapping Behaviors in Hf-Base High-k Gate Dielectrics
碩士 === 國立交通大學 === 電子工程系所 === 97 === As COMS devices are scaled aggressively into nanometer regime, the conventional SiO2 or SiON gate dielectrics are approaching their physical and electrical limits. The major issue is the intolerably huge leakage current caused by the direct tunneling of carriers t...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/19790915104903351494 |