| Summary: | 碩士 === 國立交通大學 === 材料科學與工程系所 === 97 === The purpose of this study is to develop a low-cost fabrication method of metal induced lateral crystallization of amorphous silicon film, which can replace the expensive coating equipment. After executed compressive stress at the stresses ranging from 265.8MPa to 8.857Mpa and heat treated, the specimens were analyzed by AFM, SEM, EDX, Raman and XRD.
After carried out compressive stress of 265.8MPa at 550℃ for 1h, the thickness of nickel silicide surface film was 185.95nm. EDS analysis indicated that the Ni content of the nickel silicide film was 76.22 at%. When the compressive stress executed with 2.857 MPa at 550℃ for 1 hr, the thickness of nickel silicide was 8.98 nm and EDS analyzed the Ni content was 0.33 at%. The nickel silicide was hard to form at the compressive stress between 265.8MPa and 132.9MPa at 550℃ for 1 hr. However the nickel silicide induced lateral crystallization was occurred at the compressive stress between 38.2MPa and 3.7MPa at 550℃ for 1 hr. After nickel sheet removed the compress stress and then annealed at 550℃, the lateral crystallization rate was 3.3 μm/h. The nickel concentration of the sample which was enforced with 2.857MPa at 550℃ for 1 hr and then nickel sheet removed and annealed at 550℃ for 4 hr was examined by SIMS. The residual nickel concentration was 30 counts. From Raman spectroscopy, the Raman signal at lateral crystallization region was 517.11 cm-1, the result showed that the grain was poly-grain by Raman signal.
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