Study of InGaN/GaN LEDs on sub-Micron Spacing Patterned Sapphire Substrate
碩士 === 國立交通大學 === 材料科學與工程系所 === 97 === 475-nm InGaN/GaN light-emitting diode (LED) structure successfully grown and fabricated on high density patterned sapphire substrate (PSS). Sub-micron fine pattern and inclined facet 45° pillar ideal for PSS was achieved using thermally reflow technique. GaN gr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39547088795507890281 |