Influence of Ambient Atmosphere on Thermal-Annealing Amorphous IGZO TFTs

碩士 === 國立交通大學 === 光電工程系所 === 97 === The stability of as-deposited a-IGZO TFTs was studied. The serious turn-on voltage shift under seven times sequent IDVG measurement of unstable as-deposited device was observed. It suggests that the atomic bonding of film was loose due to low temperature during sp...

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Bibliographic Details
Main Authors: Yuan, Huan-Chih, 袁煥之
Other Authors: Zan, Hsiao-Wen
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/07758196694325457718